650V 100A Trench Stop Technology IGBT
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Model No: YZPST-D100H065AT1S3
Miejsce Pochodzenia: Chiny
VCES: 650V
VGES: ±20V
VCEsat, Tvj=25: 1.75V
IC(TC=100℃ ): 100A
ICM: 200A
Tvjmax: 175 ℃
Package: TO247-3L
IC(TC=25℃): 125A
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
Pobieranie | : |
Rów Technologia Field IGBT
YZPST-D100H065AT1S3
Cechy
650 V, 100A
VCE (sat) (typ.) =1.75v@vge=15v, IC = 100a
Maksymalna temperatura połączenia 175
Pbatowanie bez PB; Zgodny z RoHS
Aplikacje
Konwertera słoneczne
Nieprzerwane źródło zasilania
Konwertera spawalnicza
Przełączniki częstotliwości przełączania od połowy do wysokiego zakresu
Klucz Wydajność i P -ACKAGE Parametry
Order codes |
VCE |
IC |
VCEsat, Tvj=25 |
Tvjmax |
Marking |
Package |
D100H065AT1S3 |
650V |
100A |
1.75V |
175 ℃ |
D100H65AT1 |
TO247-3L |
Absolutne maksimum Oceny
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage | 650 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Continuous Collector Current (TC=25 ℃ ) | 125 | A |
Continuous Collector Current (TC=100 ℃ ) | 100 | A | |
ICM | Pulsed Collector Current (Note 1) | 200 | A |
Diode Forward Current (TC=25 ℃ ) | 125 | A | |
IF | Diode Forward Current (TC=100 ℃ ) | 100 | A |
Maximum Power Dissipation (TC=25 ℃ ) | 385 | W | |
PD | Maximum Power Dissipation (TC=100 ℃ ) | 192 | W |
TJ | Operating Junction Temperature Range | -40 to 175 | ℃ |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
Elektryczny Charakterystyka (TC = 25 Jeśli nie zapisano inaczej.)
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
Breakdown Voltage | --- | --- | ||||
ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
--- | --- | |||||
Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
--- | --- | |||||
IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
--- | --- | |||||
VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
Capacitance | --- | --- |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
IF=100A, Tj=25 ℃ | --- | 1.65 | 2.2 | V | ||
VF | Diode Forward Voltage | IF=100A, Tj=150 ℃ | --- | 1.4 | --- | V |
trr | Diode Reverse Recovery Time | 201 | ns | |||
VR=400V | --- | --- | ||||
IF=100A | ||||||
Irr | Diode peak Reverse | dIF/dt=200A/us | 19 | A | ||
Recovery Current | TC=25 ℃ | --- | --- | |||
Qrr | Diode Reverse Recovery Charge | 2.45 | uC | |||
--- | --- |
Notatka 1 Powtarzalna ocena, szerokość impulsu ograniczona przez maksymalną temperaturę połączenia
Informacje o pakiecie
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.