$0.72100-499 Piece/Pieces
$0.55≥500Piece/Pieces
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| Porta: | Shanghai |
Model No: YZPST-FW26025A
Marka: Yzpst
Type: Intrinsic Semiconductor
Application: Radio
Batch Number: 2010+
VCBO: -100V
VCEO: -100V
VEBO: -5V
IC: -20A
Icm: -40A
IB: -0.5A
PC: 160W
TJ: 200℃
Tstg: -65~200℃
| Jednostki sprzedaży | : | Piece/Pieces |
| Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Opakowanie ochronne tworzyw sztucznych |
| Pobieranie | : |
|
Tranzystor Power Silicon PNP Darlington
YZPST-FW26025A
Tranzystor Power Silicon PNP Darlington
OPIS
· Wysoki prąd prądowy
: hfe = 5000 (min)@ ic = -2a
· Kolekcjoner-emiter utrzymujący napięcie
: VCEO (SUS) = -100V (min)
· Minimalne warianty losowe dla solidnej wydajności urządzenia i niezawodnego działania.
APLIKACJE
· Zaprojektowany do liniowego i przełączania sprzętu przemysłowego
Bezwzględne maksymalne oceny (TA = 25 ℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
-100 |
V |
|
VCEO |
Collector-Emitter Voltage |
-100 |
V |
|
VEBO |
Emitter-Base Voltage |
-5 |
V |
|
IC |
Collector Current-Continuous |
-20 |
A |
|
ICM |
Collector Current-Peak |
-40 |
A |
|
IB |
Base Current- Continuous |
-0.5 |
A |
|
PC |
Collector Power Dissipation @TC=25℃ |
160 |
W |
|
Tj |
Junction Temperature |
200 |
℃ |
|
Tstg |
Storage Temperature Range |
-65~200 |
℃ |
Charakterystyka termiczna
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance, Junction to Case |
1.09 |
℃/W |
PARAMETRY ELEKTRYCZNE
Tc = 25 ℃, chyba że określono inaczej
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
TYP. |
MAX |
UNIT |
|
VCEO(SUS)* |
Collector-Emitter Sustaining Voltage |
IC= -100mA, IB= 0 |
-100 |
|
|
V |
|
VCE(sat)-1* |
Collector-Emitter Saturation Voltage |
IC= -10A ,IB= -40mA |
|
|
-2.0 |
V |
|
VCE(sat)-2* |
Collector-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-3.0 |
V |
|
VBE(sat)* |
Base-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-4 |
V |
|
V BE(on)* |
Base-Emitter On Voltage |
IC= -10A ; VCE= -3V |
|
|
-2.8 |
V |
|
ICEO |
Collector Cutoff current |
VCE= -50V, IB= 0 |
|
|
-1 |
mA |
|
ICEV |
Collector Cutoff current(VBE=-1.5V) |
VCE= -100V, IB= 0 |
|
|
-0.5 |
mA |
|
VCE= -100V, IB= 0,Tc=150℃ |
-5 |
|||||
|
IEBO |
Emitter Cutoff Current |
VEB= -5V; IC= 0 |
|
|
-2 |
mA |
|
hFE-1* |
DC Current Gain |
IC= -2A ; VCE= -3V |
5000 |
|
|
|
|
hFE-2* |
DC Current Gain |
IC= -10A ; VCE= -3V |
750 |
|
18000 |
|
|
hFE-3* |
DC Current Gain |
IC= -30A ; VCE= -3V |
200 |
|
|
|
*: Test impulsu: szerokość impulsu = 300us, cykl pracy ≤2%
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