Dyski o dużej mocy Tyrystorowy układ sterowania mocą 100A
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-TO94-KP100A06
Marka: YZPST
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Karton 3. Plastikowe opakowanie ochronne |
Pobieranie | : |
Sterowanie fazowe Tyrystor
YZPST-TO94-KP100A06
Cechy tyrystora sterowania fazowego: 1. cała konstrukcja fiffused 2. możliwości wysokoprądowe 3. wysokie możliwości prądu udarowego 4. wysokie napięcie 5. wysoka DV / DT 6. niski prąd bramki 7. dynamiczna bramka 8. niska impedancja termiczna. Typowym zastosowaniem tyrystora dużej mocy jest to, że moduł ma napędy dużej mocy, sterowanie silnikiem DC, zasilacze wysokiego napięcia, przełączanie średniej mocy i zasilanie prądem stałym.
Maksymalna ocena i cechy
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITAV |
Mean on-state current |
- |
A |
Sinewave,180° conduction,Tc=100°C |
|
ITRMS |
RMS value of on-state current |
100 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
900 |
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C |
|
I2t |
I square t |
4050 |
A2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
100 |
mA |
VD = 12 V; RL= 12 ohms |
|
IH |
Holding current |
30 |
mA |
VD = 12 V; I = 1 A |
|
VTM |
Peak on-state voltage |
2.0 |
V |
ITM = 150 A; Duty cycle £ 0.01%; Tj = 25 °C
|
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
300 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
50 |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
600 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
700 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
10 |
mA |
Tj = 125 °C ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
100 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
- |
W |
|
|
PGM |
Peak gate power dissipation |
- |
W |
|
|
IGM |
Peak gate current |
- |
A |
|
|
IGT |
Gate trigger current |
200 |
mA |
TC = 25 °C |
|
VGT |
Gate trigger voltage |
3.0 |
V |
TC = 25 °C |
|
VT(T0) |
Treshold voltage |
1 |
V |
|
|
rT |
Slope resistance |
2.4 |
mΩ |
|
|
VGD |
Gate non-trigger voltage |
0.2 |
V |
Tj = 125 °C |
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
- |
ms |
Tj = 125 °C |
|
td |
Delay time |
- |
Gate current 1A, di/dt=1A/μs, Vd=0.67%VDRM, TJ=25 °C |
||
Qrr |
Reverse recovery charge |
- |
|
|
Termiczne i mechaniczne
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
°C |
|
Tstg |
Storage temperature |
-40~150 |
°C |
|
R th (j-c) |
Thermal resistance - junction to case |
0.4 |
°C/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
0.08 |
°C/W |
Single sided cooled |
P |
Mounting force |
- |
Nm |
|
W |
Weight |
- |
g |
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