Wysokie dV / dt Typ urządzenia tyrystorowego z zamontowanym ciśnieniem
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-KK2500A2500V
Marka: YZPST
TARNIK WYSOKIEJ MOCY
YZPST-KK2500A2500V
TARRISTY O WYSOKIEJ MOCY DO APLIKACJI KONTROLI FAZ
Cechy: . Wszystkie rozproszone struktury . Interdigitated Amplifying Gate Configuration . Gwarantowany maksymalny czas wyłączenia
. Wysoka zdolność dV / dt . Urządzenie zmontowane ciśnieniowo
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
2500 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
3900 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
45000
42000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.00 |
|
V |
ITM = 3000 A; Tj = 125 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM£ 1000 V |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
20 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
Dynamiczny
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -5 V) |
tq |
|
80
|
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR³ -50 V; Tj = 125 oC |
CHARAKTERYSTYKA TERMICZNA I MECHANICZNA I OZNACZENIA
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012
|
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002
|
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* Powierzchnie montażowe są gładkie, płaskie i nasmarowane
Uwaga: w przypadku obrysu i wymiarów obudowy, patrz rysunek szkicu obudowy na stronie 3 niniejszej dokumentacji technicznej
A: 73 mm
B: 109 mm
C: 98 mm
E: 36 mm
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