$4010-49 Piece/Pieces
$38≥50Piece/Pieces
| Rodzaj płatności: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transport: | Ocean,Land,Express,Others |
| Porta: | SHANGHAI |
Model No: YZPST-N2055MC280
Marka: Yzpst
Rodzaj Dostawy: Oryginalny producent
Materiały Referencyjne: arkusz danych, Zdjęcie
Miejsce Pochodzenia: Chiny
Konfiguracja: Szyk
Obecny Podział: Nie dotyczy
Bieżące Wstrzymanie (Ih) (maksymalne): Nie dotyczy
Stan Bez Prądu (maksymalny): Nie dotyczy
Numer SCR, Dioda: Nie dotyczy
Temperatura Robocza: -40 ° C ~ 125 ° C (TJ)
Typ SCR: Nie dotyczy
Struktura: Nie dotyczy
Napięcie Włączone: Nie dotyczy
Wyzwalacz Bramki Napięciowej (Vgt) (maksymalny): Nie dotyczy
Wyjście Prądowe (maksymalne): Nie dotyczy
VRRM: 2800V
VDRM: 2800V
VRSM: 2900V
DV/dt: 500 V/μsec
IT(AV): 2000A
ITRMS: 2000A
I2t: 3.3x106 A2s
IL: 800mA
| Jednostki sprzedaży | : | Piece/Pieces |
| Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
| Przykład obrazu | : |
|
| Pobieranie | : |
|
P/N: YZPST-N2055MC280
|
VRRM(1) |
V DRM(1) |
VRSM(1) |
|
2800 |
2800 |
2900 |
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
10 mA 65 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
500 V/μsec |
Przewodzenie - NA państwo
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) | 2000 | A | Tc=93oC | ||
| RMS value of on-state current | ITRMS | 2000 | A | Nominal value | ||
| Peak one cPSTCle surge | ITSM | 41000 | A | 8.3 msec (60Hz),sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
| (non repetitive) current | 36000 | A | ||||
| I square t | I2t | 3.3x106 | A2s | 8.3 msec and 10.0 msec | ||
| Latching current | IL | 800 | mA | VD = 24 V; RL= 12 ohms | ||
| Holding current | IH | mA | VD = 24 V; I = 2.5 A | |||
| 400 | ||||||
| Peak on-state voltage | VTM | V | ITM = 2000 A; | |||
| 1.45 | ||||||
| Critical rate of rise of on-state current (5) | di/dt | A/μs | Switching from VDRM < 1000 V, non-repetitive | |||
| 200 |
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM | 200 | W | tp = 40 us | ||
| Average gate power dissipation | PG(AV) | 5 | W | |||
| Peak gate current | IGM | 10 | A | |||
| Gate current required to trigger all units | IGT | 300 | mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC | ||
| 150 | mA | |||||
| 125 | mA | |||||
| Gate voltage required to trigger all units | VGT | 5 | V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC | ||
| 0.3 | 3 | V | ||||
| V | ||||||
| Peak negative voltage | VGRM | 5 | V |
Dynamiczny
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td | 1.5 | 0.7 | μs | ITM = 50 A; VD = Rated VDRM | |
| Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs | ||||||
| Turn-off time (with VR = -50 V) | 500 | 250 | μs | ITM = 1000 A; di/dt = 25 A/μs; | ||
| VR > -50 V; Re-applied dV/dt = 20 V/μs linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle > 0.01% | ||||||
| Reverse recovery charge | Qrr | μC | ITM = 1000 A; di/dt = 25 A/μs; | |||
| * | VR > -50 V |
Yzpst -n2055 MC 280
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