4000A 2500V Sterowanie tyrystorami KK4000
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-KK4000A2500V
Marka: YZPST
Kontrola fazowa tyrystora dużej mocy
YZPST-KK4000A2500V
Sterowany fazowo tyrystor
W podanej temperaturze otoczenia, pomiędzy anodą i katodą, dodaje się pewne napięcie, aby umożliwić minimalny prąd sterujący i napięcie wymagane dla tyrystora do przełączenia ze stanu wyłączenia na stan przewodzenia.
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
4000 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
4900 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
55000
52000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.30 |
|
V |
ITM = 3000 A; |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM£ 1000 V |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
20 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
Dynamiczny
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -5 V) |
tq |
|
80 |
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR³ -50 V; Tj = 125 oC |
CHARAKTERYSTYKA TERMICZNA I MECHANICZNA I OZNACZENIA
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012
|
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002
|
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
10000 |
12000
|
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
Powierzchnie montażowe gładkie, płaskie i nasmarowane
Uwaga: w przypadku obrysu i wymiarów obudowy, patrz rysunek szkicu obudowy na stronie 3 niniejszej dokumentacji technicznej
A: 100 mm
B: 150 mm
C: 127 mm
D: 35 mm
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.