DCR1020SF60 High Power Thyristor 6000V

VRRM (1)

VDRM (1)

VRSM (1)

6000~6500

6000~6500

6100~6600

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

25 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

640

A

Sinewave,180^o conduction,T_c=60^oC

RMS value of on-state current

I_TRMS

1005

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

-

8.5

KA

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

0.36x10⁶

A²s

8.3 msec and 10.0 msec

Latching current

I_L

600

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

200

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

3.6

V

I_TM = 1800 A; Duty cPSTCle £ 0.01%; T_j = 25 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

100

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

150

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

-

A

Gate current required to trigger all units

I_GT

-

300

-

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

3.0

-

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

-

0.5

ms

I_TM =50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

-

600

ms

I_TM =1000 A; di/dt =25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

*

mC

I_TM =1000 A; di/dt =25 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+125

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.022

0.052

^oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

0.004

0.008

^oC/W

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to sink

R_{Q (j-s)}

-

-

^oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

18

22

kN

Weight

W

-

g