KP800A Disc Thyristor 1800v
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-KP800A 1800V
Marka: YZPST
Sterowanie fazowe Tyrystor
YZPST-KP800A1800V
Phase Control Thyristor 1900V jest szeroko stosowany we wszelkiego rodzaju urządzeniach elektronicznych i produktach elektronicznych. Służy do sterowania prostownikiem, falownikiem, konwersją częstotliwości, regulacją napięcia i przełącznikiem bezdotykowym. Elektryczne urządzenia domowe w świetle przyciemniającym, wentylatorze prędkości, klimatyzatorze, telewizorach, lodówkach, pralkach, aparatach, połączonym układzie dźwiękowym, oświetleniowym i dźwiękowym, kontroler czasu, urządzenie zabawkowe, pilot bezprzewodowy, kamera i urządzenie tyrystorowe są szeroko stosowane w sterowaniu przemysłowym itp.
Thyristor |
Ratings |
||||||
Symbol |
Definition |
Conditions |
|
min. |
typ. |
max. |
Unit |
V EQ \F(RSM,DSM) |
max. non-repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1900 |
V |
|
V EQ \F(RRM,DRM) |
max. repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1800 |
V |
|
VT |
On-state voltage |
IT=1500 A |
TJ = 25°C |
|
|
1.70 |
V |
IT(AV) |
average forward current |
TC=25°C |
|
|
|
800 |
A |
IT(RMS) |
RMS forward current |
180° sine |
|
|
|
2214 |
A |
RthJC |
thermal resistance junction to case |
|
|
|
|
|
K/W |
RthCH |
thermal resistance case to heatsink |
|
|
|
|
|
K/W |
RthJK |
thermal resistance junction to heatsink |
|
|
|
|
0.032 |
K/W |
ITSM |
max. forward surge current |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
12.7 |
kA |
I²t |
value for fusing |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
806 |
kA²s |
di/dt |
Rate of rise of on-state current |
TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= ⅔VDRM |
repetitive |
|
|
500 |
A/µs |
non-repet |
|
|
1000 |
A/µs |
|||
dv/dt |
Maximum linear rate of rise of off-state voltage |
VD= ⅔VDRM RGK =∞; method 1 (linear voltage rise) |
TJ = 125°C |
|
|
1000 |
V/µs |
VGT |
gate trigger voltage |
VD = 6V |
TJ = 25°C |
|
|
3.0 |
V |
IGT |
gate trigger current |
VD = 6V |
TJ = 25°C |
|
|
300 |
mA |
IL |
latching current |
|
TJ = 25°C |
|
|
|
A |
IH |
holding current |
|
TJ = 25°C |
|
|
500 |
mA |
tgd |
gate controlled delay time |
|
TJ = 25°C |
|
|
2.5 |
µs |
tq |
Turn-off time |
VR=10 V; IT=20A; VD=⅔VDRM |
TJ = 150°C |
|
200 |
400 |
µs |
Tstg |
storage temperature |
|
|
-40 |
|
125 |
°C |
TJ |
virtual junction temperature |
|
|
-40 |
|
125 |
°C |
Wt |
Weight |
|
|
|
|
|
g |
F |
mounting force |
|
|
10 |
|
20 |
kN |
Zarys rysunku
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