Szybka dostawa Siemens Wszystkie rozproszone tyrystory High DV / DT
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-N1042LS18
Marka: YZPST
Cechy: Konfiguracja Interdigitated Amplifying Gate . Wysoka zdolność dV / dt . Urządzenie montowane pod ciśnieniem. Wszystkie rozproszone struktury. Gwarantowany maksymalny czas wyłączenia .
Prowadzenie - stan włączony
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Max. average value of on-state current |
IT(AV)M |
|
1042 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
IT(RMS)M |
|
2072 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
11.52 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
661x103 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
- |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.75 |
|
V |
ITM = 1700 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
500 |
|
A/ms |
Switching from VDRM £ 1000 V |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units
|
VGT |
|
3.0 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Dynamiczny
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
- |
- |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
- |
|
|
Turn-off time (with VR = -5 V) |
tq |
- |
- |
- |
ms |
ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
Reverse recovery current |
Irm |
- |
- |
- |
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
CECHY TERMICZNE I MECHANICZNE I OCENY
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
Thermal resistance - junction to case |
RQ (j-s) |
|
32 64 |
|
K/kW |
Double sided cooled Single sided cooled |
Mounting force |
F |
10 |
20 |
- |
kN |
|
Weight |
W |
|
|
- |
Kg |
about |
* Powierzchnie montażowe gładkie, płaskie i nasmarowane
Uwaga: zarys i wymiary obudowy znajdują się na szkicu skrzynki na stronie 3 niniejszych danych technicznych
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.