$4550-499 Piece/Pieces
$38≥500Piece/Pieces
| Rodzaj płatności: | L/C,T/T,Paypal |
| Incoterm: | FOB,CIF,CFR |
| transport: | Ocean,Land,Express,Others |
| Porta: | SHANGHAI |
Model No: YZPST-P150HFN120AT1R6
Marka: Yzpst
Miejsce Pochodzenia: Chiny
VcEs: 1200V
VGEs: ±20V
Lc: 150A
CRM: 300A
Ptot: 1500W
VcE(sat: 2.2V
VgE(th: 2.5V
| Jednostki sprzedaży | : | Piece/Pieces |
| Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
| Pobieranie | : |
|
P/N: YZPST-P150HFN120AT1R6
Moduł 62 mm z szybkim okopem/fieldstopem IGBT i Szybko Powrót do zdrowia Dioda
Cechy
■ Niskie straty przełączania
■ Niski Vcesal
■ Niski VCE (SAT z dodatnim współczynnikiem temperatury
Aplikacje
■ Napędy silnikowe
Systemy UPS
■ Falownik o dużej mocy
Schemat równoważnego obwodu
IGBT -Nverter
Maksymalne wartości znamionowe
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VcEs |
Collector-Emitter Voltage |
Tv=25℃ |
1200 |
V |
|
VGEs |
Gate-Emitter Peak Voltage |
Ty=25℃ |
±20 |
V |
|
lc |
Continuous DC Collector Current |
Tc=100℃ |
150 |
A |
|
CRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
|
Ptot |
Total Power Dissipation |
Tc=25℃,Tyjmax=175℃ |
1500 |
W |
| Symbol | Values | |||||
| Description | Conditions | Min. | Typ. | Max. | Unit | |
| VcE(sat | Collector-Emitter Saturation Voltage | VcE=15V,Ic=150A,Tv=25℃ | 2.2 | V | ||
| Vge=15V,Ic=150A,Tv=125℃ | 2.5 | V | ||||
| VgE(th | Gate Threshold Voltage | VgE=VcE,Ic=3.8mA | 5 | 5.8 | 6.5 | V |
| IcEs | Collector-Emitter Cut-Off Current | VcE=1200V,VgE=0V | mA | |||
| GES | Gate-Emitter Leakage Current | VcE=20V,VcE=0V | 600 | nA | ||
| RGint | Internal Gate Resistor | Ty=25℃ | 3.8 | Ω | ||
| Cies | Input Capacitance | 11.5 | nF | |||
| Coes | Output Capacitance | Vce=25V,Vce=0V,f=1MHz | 1 | nF | ||
| Cres | Reverse Transfer Capacitance | 0.4 | nF | |||
| tt(on) | Turn-on Delay Time | 139 | ns | |||
| Vcc=600V | ||||||
| t | Turn-on Rise Time | VoE=±15V | 37 | nS | ||
| d(a) | Turn-off Delay Time | Ic=150A | 192 | nS | ||
| t | Turn-off Fall Time | Rg=2.0g | 128 | nS | ||
| Eon | Turn-on Switching Loss | Inductive Load | 7.9 | -= | mJ | |
| E₀ff | Turn-off Switching Loss | Ty=25℃ | 8.4 | mJ | ||
| Isc | Short Circuit Data | VcE≤15V,Vcc=600V | 518 | A | ||
| tp≤10μs,Tv=25℃ | ||||||
| Thermal Resistance,Junction to Case | Per IGBT | —-- | 0.1 | —-- | K/W | |
| Twop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ | |
Dioda -Nverter
Maksymalny Wartości znamionowe
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
Tv=25℃ |
1200 |
V |
|
lF |
Continuous DC Forward Current |
|
150 |
A |
|
lFRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
Wartości charakterystyczne
| Symbol | Values | |||||
| Description | Conditions | Min. | Typ | Max. | Unit | |
| Forward Voltage | lr=150A,Vse=0V,Tv=25℃ | 2.5 | V | |||
| VF | l=150A,Vge=0V,Tv=125℃ | 1.9 | —-- | V | ||
| RM | Peak Reverse Recovery Current | —-- | 42 | A | ||
| Qr | Recovered Charge | l=150A,Vg=600V,Vge=-15V | 3.1 | uC | ||
| Erec | Reverse Recovery Energy | Ty=25℃ | 1.1 | mJ | ||
| Tuop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ | |
Pakiet zarysowy (MM)
Tel: 86-514-87782298
Whatsapp: +8613805278321
Adres: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Witryna internetowa: https://pl.yzpst.com
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