Wysoka zdolność zwarcia 650V IGBT Moduł zasilania 200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
Rodzaj płatności: | L/C,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land |
Porta: | SHANGHAI |
Model No: YZPST-SKM195GB066D
Marka: Yzpst
Miejsce Pochodzenia: Chiny
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
Przykład obrazu | : | |
Pobieranie | : |
Moduł zasilania IGBT Typ: YZPST-SKM195GB066D
Aplikacje
Falownik na napęd silnikowy
Wzmacniacz napędu Servo i DC
UPS (zasilacze nieprzerwane)
Miękki maszyna spawalnicza
Cechy
Low VCE (SAT) z technologią stoliń pola
VCE (SAT) z dodatnim współczynnikiem temperatury
W tym szybkie i miękkie odzyskiwanie anty-równolegle FWD
Wysoka zdolność zwarcia (10us)
Niska struktura modułu indukcyjnego
Maksymalna temperatura połączenia 175 ℃
Absolutny Maksymalny Oceny
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
650 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
200 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
400 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
695 |
W |
Charakterystyka IGBT
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
Internal Gate Resistance | Rgint | 1 | Ω | |||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
Fall Time | tf | VGE = ±15V | 58 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
Fall Time | tf | VGE = ±15V | 102 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A |
Charakterystyka diody
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
Charakterystyka modułu T C = 25 ° C, chyba że określono inaczej
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
Pakiet Wymiary
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.