$1655-49 Piece/Pieces
$135≥50Piece/Pieces
| Rodzaj płatności: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transport: | Ocean,Land |
| Porta: | SHANGHAI |
Model No: YZPST-G900WB120B6TC
Marka: Yzpst
Miejsce Pochodzenia: Chiny
VCES: 1200V
VGES: ±20V
IC TC=25℃: 880A
IC TC=95℃: 900A
ICM: 1200A
Ptot: 3125W
IF(AV): 900A
| Jednostki sprzedaży | : | Piece/Pieces |
| Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
| Przykład obrazu | : |
|
| Pobieranie | : |
|
Moduł IGBT 1200V 900A
P/N: YZPST-G900WB120B6TC
PRODUKT CECHY
Chip IGBT (Trench+FS)
Niskie napięcie nasycenia i pozytywny współczynnik temperatury
Szybkie przełączanie i krótki prąd ogona
Bezpłatne diody kół z szybkim i miękkim odzyskiwaniem odwrotnym
Uwzględniono zmysł temperatury
APLIKACJEKontrola silnika AC
Kontrola ruchu/serwomechanizmu
Falowniki i zasilacze
Ogniwo fotowoltaiczne/paliwowe
Maksymalne oceny IGBT-Absolute ( T C = 25 ° C chyba że W przeciwnym razie określone )
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VCES | Collector Emitter Voltage | TJ=25℃ | 1200 | V |
| VGES | Gate Emitter Voltage | ±20 | ||
| IC | DC Collector Current | TC=25℃, TJmax =175℃ | 880 | |
| TC=95℃, TJmax =175℃ | 900 | A | ||
| ICM | Repetitive Peak Collector Current | tp=1ms | 1200 | |
| Ptot | Power Dissipation Per IGBT | TC=25℃, TJmax =175℃ | 3125 | W |
Maksymalne oceny diody-absolute ( t c = 25 ° C chyba że W przeciwnym razie określone )
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VRRM | Repetitive Reverse Voltage | TJ=25℃ | 1200 | V |
| IF(AV) | Average Forward Current | 900 | A | |
| IFRM | Repetitive Peak Forward Current | tp=1ms | 1200 | |
| I2t | TJ =150℃, t=10ms, VR=0V | 45 | kA2s | |
IGBT-inwerter
Charakterystyka elektryczna ( T C = 25 ° C chyba że W przeciwnym razie określone )
| Symbol | Parameter/Test Conditions | Min. | Typ. | Max. | Unit | ||
| VGE(th) | Gate Emitter Threshold Voltage | VCE=VGE , IC=24mA | 5 | 5.8 | 6.5 | ||
| Collector Emitter | IC=900A, VGE=15V, TJ=25℃ | 1.9 | 2.3 | ||||
| VCE(sat) | Saturation Voltage | IC=900A, VGE=15V, TJ=125℃ | 2.2 | V | |||
| IC=900A, VGE=15V, TJ=150℃ | 2.25 | ||||||
| ICES | Collector Leakage Current | VCE=1200V, VGE=0V, TJ=25℃ | 1 | mA | |||
| VCE=1200V, VGE=0V, TJ=150℃ | 10 | ||||||
| IGES | Gate Leakage Current | VCE=0V,VGE=±20V, TJ=25℃ | -400 | 400 | nA | ||
| RGint | Integrated Gate Resistor | 0.7 | Ω | ||||
| Qg | Gate Charge | VCE=900V, IC=900A , VGE=15V | 3.1 | µC | |||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f =1MHz | 43.2 | nF | |||
| Cres | Reverse Transfer Capacitance | 2.07 | nF | ||||
| td(on) | Turn on Delay Time | VCC=600V,IC=900A RG =1.5Ω , | TJ=25℃ | 100 | ns | ||
| VGE=±15V, | TJ=150℃ | 110 | ns | ||||
| tr | Rise Time | Inductive Load | TJ=25℃ | 85 | ns | ||
| TJ=150℃ | 95 | ns | |||||
| td(off) | Turn off Delay Time | VCC=600V,IC=900A RG =1.5Ω , | TJ=25℃ | 530 | ns | ||
| VGE=±15V, | TJ=150℃ | 580 | ns | ||||
| tf | Fall Time | Inductive Load | TJ=25℃ | 65 | ns | ||
| TJ=150℃ | 215 | ns | |||||
| TJ=25℃ | 55 | mJ | |||||
| Eon | Turn on Energy | TJ=125℃ | 85 | mJ | |||
| VCC=600V,IC=900A RG =1.5Ω , | TJ=150℃ | 95 | mJ | ||||
| VGE=±15V, | TJ=25℃ | 45 | mJ | ||||
| Eoff | Turn off Energy | Inductive Load | TJ=125℃ | 58 | mJ | ||
| TJ=150℃ | 63 | mJ | |||||
| ISC | Short Circuit Current | tpsc≤10µs , VGE=15V | 2200 | A | |||
| TJ=150℃,VCC=800V | |||||||
| RthJC | Junction to Case Thermal Resistance （Per IGBT） | 0.048 | K /W | ||||
Zarys pakietu
Tel: 86-514-87782298
Whatsapp: +8613805278321
Adres: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Witryna internetowa: https://pl.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now