Wysokie napięcie blokujące M1A080120L1 TO-247-4 N-Kannel Power MOSFET
$4.5200-999 Piece/Pieces
$4.2≥1000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | CFR,FOB,CIF |
transport: | Ocean,Land,Express,Others,Air |
Porta: | SHANGHAI |
$4.5200-999 Piece/Pieces
$4.2≥1000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | CFR,FOB,CIF |
transport: | Ocean,Land,Express,Others,Air |
Porta: | SHANGHAI |
Model No: YZPST-M1A080120L1
Miejsce Pochodzenia: Chiny
VDSmax: 1200V
VGSmax: -10/+25V
VGSop: -5/+20V
ID Tc=25℃: 36A
ID Tc=100℃: 24A
ID(pulse): 80A
PD: 192W
TJ, TSTG: -55 to +150℃
Pulsowane zastosowania mocy
Part Number |
Package |
M1A080120 L1 |
TO-247-4 |
Symbol | Parameter | Value | Unit | Test Conditions | Note |
VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | |
VGSmax | Gate-Source Voltage | -0.4 | V | Absolute maximum values | |
VGSop | Gate-Source Voltage | -0.25 | V | Recommended operational values | |
ID | Continuous Drain Current | 36 | A | VGS=20V, Tc=25℃ | |
24 | VGS=20V, Tc=100℃ | ||||
ID(pulse) | Pulsed Drain Current | 80 | A | Pulse width tp limited by TJmax | |
PD | Power Dissipation | 192 | W | Tc=25℃, TJ=150℃ | |
TJ, TSTG | Operating Junction and Storage Temperature | -55 to +150 | ℃ |
Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | |
VGS(th) | Gate Threshold Voltage | 2 | 2.4 | 4 | V | VDS=VGS, ID=5mA | Fig. 11 |
/ | 1.8 | / | VDS=VGS, ID=5mA, TJ=150℃ | ||||
IDSS | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | VDS=1200V, VGS=0V | |
IGSS+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=25V | |
IGSS- | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=-10V | |
RDS(on) | Drain-Source On-State Resistance | / | 80 | 98 | mΩ | VGS=20V, ID=20A | Fig. |
/ | 140 | / | VGS=20V, ID=20A, TJ=150℃ | 4,5,6 | |||
Ciss | Input Capacitance | / | 1475 | / | VGS=0V | Fig. | |
Coss | Output Capacitance | / | 94 | / | pF | VDS=1000V | 15,16 |
Crss | Reverse Transfer Capacitance | / | 11 | / | f=1MHz | ||
Eoss | Coss Stored Energy | / | 52 | / | µJ | VAC=25mV | |
EON | Turn-On Switching Energy | / | 564 | / | µJ | VDS=800V, VGS=-5V/20V | |
EOFF | Turn-Off Switching Energy | / | 260 | / | ID=20A, RG(ext)=2.5Ω, L=200μH | ||
td(on) | Turn-On Delay Time | / | 9.3 | / | |||
tr | Rise Time | / | 9.5 | / | VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω | ||
td(off) | Turn-Off Delay Time | / | 18 | / | ns | ||
tf | Fall Time | / | 7.6 | / | |||
RG(int) | Internal Gate Resistance | / | 3.1 | / | Ω | f=1MHz, VAC=25mV | |
QGS | Gate to Source Charge | / | 24 | / | VDS=800V | ||
QGD | Gate to Drain Charge | / | 15 | / | nC | VGS=-5V/20V | |
QG | Total Gate Charge | / | 79 | / | ID=20A |
Odwracać Characte Diode Ristics
Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
VSD | Diode Forward Voltage | 3.6 | / | V | VGS=-5V, ISD=10A | Fig. 8,9,10 |
3.3 | / | VGS=-5V, ISD=10A, TJ=150℃ | ||||
IS | Continuous Diode Forward Current | / | 44 | A | TC=25℃ | |
trr | Reverse Recover Time | 35 | / | ns | ||
Qrr | Reverse Recovery Charge | 91 | / | nC | VR=800V, ISD=20A | |
Irrm | Peak Reverse Recovery Current | 4.5 | / | A |
Pakiet Wymiary
Pakiet do 247-4
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.