NPN Krzemowe tranzystory mocy MJE2955T uzupełniają się do MJE3055T
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | SHANGHAI |
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | SHANGHAI |
Model No: YZPST-MJE2955T
Marka: Yzpst
VCBO: -70V
VCEO: -60V
VEBO: -5V
IC: -10A
PTOT: 75W
Tj: 150℃
Tstg: -55-150℃
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Opakowanie ochronne tworzyw sztucznych |
Pobieranie | : |
PNP Silicon Power Tranzistors MJE2955T
Desripcription:
MJE2955T jest tranzystorem PNP, który jest uzupełniający się do MJE3055T i jest używany w obwodach wzmocnienia mocy audio i konwersji mocy.
Formularz pakietu: TO-220
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
-70 |
V |
VCEO |
Collector-Emitter Voltage |
-60 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Continuous Collector Current |
-10 |
A |
PTOT |
Total dissipation at Tcase=25 ℃ |
75 |
W |
Tj |
Junction Temperature |
150 |
℃ |
Tstg |
Storage Temperature Range |
-55-150 |
℃ |
● Charakterystyka elektryczna (TC = 25 ° C, chyba że inaczej określony)
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
Min |
Type |
Max |
||||
VCBO |
Collector-Base Breakdown Voltage |
IC= -10mA |
-70 |
|
|
V |
VCEO |
Collector-Emitter Breakdown Voltage |
IC= -200mA |
-60 |
|
|
V |
VEBO |
Emitter-Base Breakdown Voltage |
IE= -10mA |
- 5 |
|
|
V |
ICBO |
Collector Cutoff Current |
VCB= -70V |
|
|
1 |
mA |
IEBO |
Emitter Cutoff Current |
VEB= -5V |
|
|
5 |
mA |
hFE |
DC Current Gain |
IC= -4A,VCE= -4V |
20 |
|
100 |
|
VCE(sat) |
Collector-Base Breakdown Voltage |
IC= -4A,IB= -0.4A |
|
|
-1.1 |
V |
VBE(sat) |
Base-Emitter Saturation Voltage |
IC= -4A,IB= -4A |
|
|
-1.8 |
V |
fT |
Transition Frequency |
VCE=10V, IC=0.5A, f=1MHZ |
2 |
|
|
MHZ |
a:Pulse Test,tp ≤300us,δ≤2% |
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