1000A Moduł przeciwrównoległego SCR-KPX1000A-1600V
$2951-19 Piece/Pieces
$262≥20Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | SHANGHAI |
$2951-19 Piece/Pieces
$262≥20Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | SHANGHAI |
Model No: YZPST-KPX1000A-1600V
Marka: Yzpst
Miejsce Pochodzenia: Chiny
VRRM: 1600V
VDRM: 1600V
VRSM: 1700V
DV/dt: 1000 V/sec
IT(AV): 1000A
ITRMSM: 1570A
Zespół modułu SCR-równolegle SCR-KPX1000A-1600V
Cechy:
Cały rozproszony projekt
Wysokie możliwości obecne
Wysokie możliwości prądu przypływu
Wysokie napięcia prędkości
Wysoki D v /dt
Brama dynamiczna prądu o niskiej bramie
Niska impedancja termiczna
Kompaktowy rozmiar i niewielka waga
APLIKACJA
Dyski o dużej mocy
Kontrola silnika DC
Zasilacze wysokiego napięcia
Blokowanie - poza stanem
VRRM (1) | VDRM (1) | VRSM (1) |
1600 | 1600 | 1700 |
VRRM = powtarzające się szczytowe napięcie odwrotne
VDRM = powtarzające się napięcie stanu poza szczytem
VRSM = nie powtarzalne szczytowe napięcie odwrotne (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
10 mA 100 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Prowadzenie - w stanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Max. average value of on-state current |
IT(AV) |
|
1000 |
|
A |
Sinewave,180o conduction,Tc=95oC |
RConducting - on state MS value of on-state current |
ITRMSM |
|
1570 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
30 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
4500x103 |
|
A2s |
10 msec |
Treshold voltage |
VT(T0) |
|
0.928 |
|
V |
|
Slope resistance |
rT |
|
0.189 |
|
mΩ |
|
Latching current |
IL |
|
2000 |
|
mA |
VD = 12 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 12 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.75 |
|
V |
ITM =3000 A(MAX); Tj =1 25 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM £ 1000 V |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units
|
VGT |
|
3 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
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