Trzecia struktura spustu czujnika kwadrantu do 126 2N6075B TRIACKI SERESY
$0.0831000-9999 Piece/Pieces
$0.0782≥10000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$0.0831000-9999 Piece/Pieces
$0.0782≥10000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Model No: YZPST-2N6075B
Marka: Yzpst
Miejsce Pochodzenia: Chiny
DRM: 600V
VRRM: 600V
IT(RMS): 4A
ITSM: 30A
I2t: 3.7A2s
PG(AV): 0.5W
IGM: 1A
TJ: -40̚-110℃
Tstg: -40̚ 150℃
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
Pobieranie | : |
Wartość stawki (Chyba że wyjątkowe przedstawia W T J. = 25 ℃ )
Description |
symbol |
value |
unit |
Repetitive paek off-state voltage (Tj = -40 ~ 125℃ ) Half sine wave 50 Hz, gate open -6075B |
V DRM VRRM |
600 600 |
V |
Nominal RMS on-state current Full sine wave 5 0 Hz |
IT(RMS) |
4 |
A |
Non-repetitive peak surge current (junction temperature Tj = 2 5℃ ) One cycle 5 0 Hz |
ITSM |
30 |
A |
Fuse current (t = 8.3 ms) |
2 I t |
3.7 |
A2s |
Gate average power (TC = 8 0℃ , t = 8.3 ms) |
PG(AV) |
0.5 |
W |
Gate peak current (t ≤ 2.0 μ s) |
IGM |
1 |
A |
Work junction temperature |
TJ |
-40~ 110 |
℃ |
Storage temperature |
Tstg |
-40~150 |
℃ |
Charakterystyka termiczna
Description |
Symbol |
Max |
Unit |
Thermal resistance ( junction to case) |
Rj C |
3.5 |
℃/W |
Thermal resistance ( junction to ambient ) |
Rj A |
75 |
℃//W |
Charakterystyka elektryczna (chyba że Specyfika przedstawia T J. = 25 ℃ )
Description |
Symbol |
Min |
Type |
Max |
Unit |
Repetitive paek off-state current (VD = Rated VDRM ,VR RM gate open ) Tj = 2 5 ℃ Tj = 1 1 0 ℃ |
IDRM, IRRM |
- |
- |
10 2 |
uA mA |
Peak on-state Voltage (IT = 6 A) |
VT |
|
- |
2 |
V |
Gate trigger current (VD = 1 2 V, RL = 3 0 Ω ) MT 2 ( +) , G( +) MT2 (+), G(- ) MT2 (- ), G(- ) MT2 (- ), G( + ) - - - B |
IGT |
- - - |
- - - - |
3 3 3 5 |
mA |
Gate trigger voltage (VD = 1 2 V, RL = 3 0 Ω ) All se rises |
VGT |
- |
1.4 |
2.5 |
V |
Gate non-trigger voltage (VD = 1 2 V, RL = 3 0 Ω , Tj = 1 1 0 校 ) All se rises |
VGD |
0.2 |
- |
- |
V |
Hold current (Candution current IT= 100mA) Tj = 2 5 ℃ Tj = 1 1 0 ℃ |
IH |
- - |
- - |
15 30 |
mA |
Critical Rate-of-Rise of Off-state Voltage VDM=1/2VDRM, Tj=110 °C RGK=1KΩ |
dv/dt |
5 |
- |
|
V/uS |
Rysunek pakietu do 126 :
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.