TO-220F BTA216X-600B Triac mają dobrą wydajność w DV/DT i niezawodność
$0.165000-49999 Piece/Pieces
$0.13≥50000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$0.165000-49999 Piece/Pieces
$0.13≥50000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Model No: YZPST-BTA216X-600B
Marka: Yzpst
Miejsce Pochodzenia: Chiny
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
I2t: 98A2S
Di/dt: 100A/μs
IGM: 2A
VGM: 5W
PGM: 5W
kontrolery.
GŁÓWNE CECHY
Symbol |
Value |
Unit |
IT(RMS) |
16 |
A |
VDRM/VRRM |
600 |
V |
IGT |
≤10 |
mA |
Absolute Max I Mum Oceny
Symbol | PARAMETER | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤99℃ | 16 | A |
Non repetitive surge peak on-state current | t=20ms | 140 | ||
ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 150 | A |
I2t | I2t Value for fusing | t= 10ms | 98 | A2S |
di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
IGM | Peak gate current, | — | 2 | A |
VGM | Peak gate voltage | — | 5 | W |
PGM | Peak gate power | — | 5 | W |
PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
Tj | Operating junction temperature range | 125 | ℃ |
Charakterystyka elektryczna (tj = 25。c, chyba że określono inaczej)
Charakterystyka statyczna
Symbol | Parameter | Test Condition | Quadrant | Value | Unit | ||
MIN | TYPE | MAX | |||||
IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
VT | On-state voltage | IT=20A | - | 1.2 | 1.5 | V | |
IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | mA | |
Ⅰ-Ⅲ | - | - | 60 | mA | |||
IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA |
Charakterystyka dynamiczna
Symbol | Parameter | Test Condition | Value | Unit | |
MIN | TYPE | ||||
dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
exponential waveform; gate open circuit | |||||
dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16A; without snubber; gate open circuit | 28 | A/ms | |
T | Gate controlled turn-on time | ITM = 20 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
tgt |
PAKIET MECHANICZNY DANE
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.