BTA208X-600E Triac Wysoka szybkość DV/DT z silną rezystancją interfejsu elektromagnetycznego
$0.145000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Others,Ocean |
Porta: | SHANGHAI |
$0.145000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Others,Ocean |
Porta: | SHANGHAI |
Model No: YZPST-BTA208X-600E
Marka: Yzpst
Miejsce Pochodzenia: Chiny
IT(RMS): 8A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
ITSM: 80A
I2t: 32A2S
DI/dt: 50A/ μs
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
Przykład obrazu | : | |
Pobieranie | : |
BTA208 Series 8A Triacs
YZPST-BTA208X-600E
OPIS:S Zastosowanie się do standardów UL (ref. Pliku: E516503).
GŁÓWNY CECHY:
symbol |
value |
unit |
IT(RMS) |
8 |
A |
VDRM/VRRM |
600/800 |
V |
VTM |
≤1.5 |
V |
ABSOLUTNY MAKSYMALNY Oceny:
Symbol |
Parameter |
Value |
Unit |
ITSM |
Non repetitive surge peak on-state Current (tp=10ms) |
80 |
A |
I2t |
(tp=10ms) |
32 |
A2S |
dI/dt |
IG=2IGT ,tr≤100ns,Tj=125℃ |
50 |
A/ μs |
IGM |
Peak gate current(tp=20us) |
2 |
A |
PG(AV) |
Average gate power |
1=0.5 |
W |
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+125 -40--+125 |
℃ |
Viso |
AC RMS App lied for 1 minute Between lead and case |
1800 |
V |
I2t value for fusing (tp=10ms) |
I2t |
32 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
5 |
W |
Charakterystyka elektryczna (tj = 25 ℃ , chyba że określono inaczej)
Parameter | Value | |||||||
Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
IGT | VD=12V, | 5 | 10 | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.5 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |||
IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA | |
Ⅰ-Ⅲ | 20 | 25 | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 25 | 35 | 70 | 90 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||||
dV/dt | MIN | 50 | 200 | 500 | 1000 | V/ µs |
|
|
Ⅱ |
|
70 |
90 |
|
dV/dt |
VD=2/3VDRM Tj=125℃ Gate open |
MIN |
200 |
500 |
V/ µs |
Charakterystyka statyczna
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=11A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | Tj=25℃ | 5 | µA | ||
IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 1 | mA |
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