To-220 8A BTA208S 800V TRIAC Dobra wydajność w DV/DT i niezawodność
$0.09-0.1 /Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Zamówienie: | 6000 Piece/Pieces |
transport: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$0.09-0.1 /Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Zamówienie: | 6000 Piece/Pieces |
transport: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Model No: YZPST-BTA208S-800B
Marka: Yzpst
Place Of Origin: China
IT(RMS): 8A
VDRM/VRRM: 600/800V
IGT: ≤10mA
ITSM T=20ms: 65A
ITSM T= 16.7ms: 71A
I2t: 21A2S
Di/dt: 100A/μs
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Braid |
Pobieranie | : |
BTA208 Triacs
YZPST-BTA208S-800B
Desrcription:GŁÓWNE CECHY
Symbol | Value | Unit |
IT(RMS) | 8 | A |
VDRM/VRRM | 600/800 | V |
IGT | ≤10 | mA |
Absolute Max I Mum Oceny
Symbol | PARAMETER | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤102℃ | 8 | A |
Non repetitive surge peak on-state current | t=20ms | 65 | ||
ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 71 | A |
I2t | I2t Value for fusing | t= 10ms | 21 | A2S |
di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 12 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
IGM | Peak gate current | — | 2 | A |
VGM | Peak gate voltage | — | 5 | W |
PGM | Peak gate power | — | 5 | W |
PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
Tj | Operating junction temperature range | 125 | ℃ |
Charakterystyka elektryczna (tj = 25。c, chyba że określono inaczej)
Charakterystyka statyczna
Symbol | Value | ||||||
Parameter | Test Condition | Quadrant | MIN | TYPE | MAX | Unit | |
IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
VT | On-state voltage | IT= 10A | - | 1.3 | 1.65 | V | |
IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 60 | mA |
Ⅰ-Ⅲ | - | - | 60 | mA | |||
IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA |
Charakterystyka dynamiczna
Symbol | Value | ||||
Parameter | Test Condition | MIN | TYPE | Unit | |
dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
exponential waveform; gate open circuit | |||||
dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without snubber; gate open circuit | 14 | A/ms | |
T | Gate controlled turn-on time | ITM = 12 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
tgt |
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