Wyższa wydajność systemu N-kanał SIC MOSFET TO247-4L
$3650-499 Piece/Pieces
$32≥500Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land |
Porta: | SHANGHAI |
$3650-499 Piece/Pieces
$32≥500Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Land |
Porta: | SHANGHAI |
Model No: YZPST-M2A016120L
Marka: Yzpst
Miejsce Pochodzenia: Chiny
VDSmax: 1200V
VGSmax: -8/+22V
VGSop: -4/+18V
ID Tc=25℃: 115A
ID Tc=100℃: 76A
ID(pulse): 250A
PD: 582W
TJ, TSTG: -55 to +175℃
N-kanałowa moc Mosfet P/N: YZPST-M2A016120L SIC MOSFET
Cechy
Wysokie napięcie blokujące o niskiej oporności
Szybka przełączanie z niską pojemnością
Łatwy w równoległości i prosty w prowadzeniu
Korzyści
Wyższa wydajność systemu
Zmniejszone wymagania chłodzenia
Zwiększona gęstość mocy
Zwiększona częstotliwość przełączania systemu
Aplikacje
Energia odnawialna
EV ładowarki baterii
Konwertery DC/DC wysokiego napięcia
Zasilacze trybu przełącznika
Pakiet
Part Number |
Package |
M2A016120L |
TO-247-4 |
Maksymalne oceny (t c = 25 ℃ Un mniej określone inaczej)
Symbol | Parameter | Value | Unit | Test Conditions | Note |
VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | |
VGSmax | Gate-Source Voltage | -8/+22 | V | Absolute maximum values | |
VGSop | Gate-Source Voltage |
-4/+18 |
V | Recommended operational values | |
ID | Continuous Drain Current | 115 | A | VGS=18V, Tc=25℃ | |
76 | VGS=18V, Tc=100℃ | ||||
ID(pulse) | Pulsed Drain Current | 250 | A | Pulse width tp limited by TJmax | |
PD | Power Dissipation | 582 | W | Tc=25℃, TJ=175℃ | |
TJ, TSTG | Operating Junction and Storage Temperature | -55 to +175 | ℃ |
Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | |
VGS(th) | Gate Threshold Voltage | 1.9 | 2.6 | 4 | V | VDS=VGS, ID=23mA | |
/ | 1.8 | / | VDS=VGS, ID=23mA, TJ=175℃ | ||||
IDSS | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | VDS=1200V, VGS=0V | |
IGSS+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=22V | |
IGSS- | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=-8V | |
RDS(on) | Drain-Source On-State Resistance | / | 16 | 21 | mΩ | VGS=18V, ID=75A | |
/ | 28 | / | VGS=18V, ID=75A, TJ=175℃ | ||||
gfs | Transconductance | / | 40.5 | / | S | VDS=20V, ID=75A | |
/ | 37 | / | VDS=20V, ID=75A, TJ=175℃ | ||||
Ciss | Input Capacitance | / | 4300 | / | VGS=0V | ||
Coss | Output Capacitance | / | 236 | / | pF | VDS=1000V | |
Crss | Reverse Transfer Capacitance | / | 35 | / | f=1MHz | ||
Eoss | Coss Stored Energy | / | 136 | / | µJ | VAC=25mV | |
EON | Turn-On Switching Energy | / | 2.1 | / | µJ | VDS=800V, VGS=-4V/18V | |
EOFF | Turn-Off Switching Energy | / | 1.6 | / | ID=40A, RG(ext)=2.5Ω, L=100μH | ||
td(on) | Turn-On Delay Time | / | 150 | / | |||
tr | Rise Time | / | 38 | / | VDS=800V, VGS=-4V/18V, ID=40A RG(ext)=2.5Ω, RL=20Ω | ||
td(off) | Turn-Off Delay Time | / | 108 | / | ns | ||
tf | Fall Time | / | 35 | / | |||
RG(int) | Internal Gate Resistance | / | 2.3 | / | Ω | f=1MHz, VAC=25mV | |
QGS | Gate to Source Charge | / | 60 | / | VDS=800V | ||
QGD | Gate to Drain Charge | / | 44 | / | nC | VGS=-4V/18V | |
QG | Total Gate Charge | / | 242 | / | ID=40A |
Pakiet Wymiary
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