Wysoka zdolność udarowa dwukierunkowy triak scr 330A
$5.92-999 Piece/Pieces
$4.5≥1000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Zamówienie: | 1000 Piece/Pieces |
transport: | Ocean,Air |
Porta: | Shanghai |
$5.92-999 Piece/Pieces
$4.5≥1000Piece/Pieces
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Zamówienie: | 1000 Piece/Pieces |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-SG50AA80-1
Marka: YZPST
Jednostki sprzedaży | : | Piece/Pieces |
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Pudełko kartonowe 3. Plastikowe opakowanie ochronne |
Triak YZPST-SG50AA80
SG50AA80 dwukierunkowy scr triak 800 V.
TRIAC (TYP IZOLOWANY)
SG50AA to izolowane triaki nadające się do szerokiego zakresu zastosowań, takich jak kopiarka, kuchenka mikrofalowa, przełącznik półprzewodnikowy, sterowanie silnikiem, sterowanie oświetleniem i sterowanie nagrzewnicą.● IT (AV) 50A
● Wysoka zdolność udarowa 330A
● Terminale kart
Symbol |
Item |
|
|
|
Unit |
SG50AA80 |
SG50AA120 |
SG50AA160 |
|||
VDRM |
Repetitive Peak Off-State Voltage |
800 |
1200 |
1600 |
V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT(RMS) |
R.M.S. On-State Current |
Tc=58℃ |
50 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
450 |
A |
I2t |
I2t |
Value for one cycle of surge current |
730 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PG(AV) |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25℃,VD=1/2VDRM, |
100 |
A/μs |
Tj |
Operating Junction Temperature |
|
-25 to +125 |
℃ |
Tstg |
Storage Temperature |
|
-40 to +125 |
℃ |
|
Mounting Torque(M4) |
Recommended Value 1.0-1.4(10-14) |
1.5(15) |
N.m |
|
Mass |
Typical value |
2 |
g |
Elektryczne A L c h c Ara T E walna
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current,
max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current [√ 2 × IT ( RMS )], Inst.
measurement |
1.4 |
V |
|
I + GT1 |
1 |
Gate Trigger Current, max |
Tj=25℃,IT=1A,VD=6V |
80 |
mA |
I -GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
I + GT3 |
3 |
|
- |
||
I -GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
V+ GT1 |
1 |
Gate Trigger Voltage, max |
Tj=25℃,IT=1A,VD=6V |
3 |
V |
V-GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
V+ GT3 |
3 |
|
- |
||
V-GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
VGD |
Non-Trigger Gate Voltage, min |
Tj=125℃,VD=1/2VDRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State
Voltage,min. |
Tj=125℃,VD=2/3VDRM,Exoponential wave. |
300 |
V/μs |
|
dv/dt]c |
Critical Rate of Rise off-State
Voltage at commutation, min |
Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms |
200 |
V/μs |
|
IH |
Holding Current, typ. |
Tj=25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
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