Wzmocnienie fazy 2100 V Wzmocnienie fazy Tyrystor
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-R2619ZC21J
Marka: YZPST
YZPST-R2619ZC21J
Cechy:
. Wszystkie rozproszone struktury
. Interdigitated Amplifying Gate Configuration
. Gwarantowany maksymalny czas wyłączenia
. Wysoka zdolność dV / dt
. Urządzenie zmontowane ciśnieniowo
CHARAKTERYSTYKA ELEKTRYCZNA I OCENY
Blocking - Off State
VRRM (1) |
VDRM (1) |
VRSM (1) |
2100 |
2100 |
2200 |
V RRM = Powtarzalne szczytowe napięcie wsteczne
V DRM = Repetitive peak off state voltage
V RSM = Niepowtarzalne szczytowe napięcie wsteczne (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
200 V/msec |
Prowadzenie - na stanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
2619 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
ITRMS |
|
5227 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
33.8
37.2 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.71x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I =2.5 A |
Peak on-state voltage |
VTM |
|
2.3 |
|
V |
ITM = 4000 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1500 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units
|
VGT |
|
3 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Dynamiczny
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
- |
0.8 |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
1.5 |
|
|
Turn-off time (with VR = -5 V) |
tq |
|
- |
50 |
ms |
ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
CHARAKTERYSTYKA TERMICZNA I MECHANICZNA I OZNACZENIA
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
Thermal resistamce - junction to sink |
RQ (c-s) |
|
11 22 |
|
K/kW |
Double sided cooled * Single sided cooled * |
Mounting force |
F |
27 |
47 |
- |
kN |
|
Weight |
W |
|
|
1.7 |
Kg |
about |
* Powierzchnie montażowe są gładkie, płaskie i nasmarowane
Uwaga: dla obrysu i wymiarów obudowy, patrz rysunek szkicu obudowy na ostatniej stronie niniejszych Danych technicznych
Sym |
A |
B |
C |
D |
H |
mm |
109 |
73 |
98 |
3.5×3 |
35±1 |
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