C458PB Tyrystor o dużej mocy inwertera
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | SHANGHAI |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | SHANGHAI |
Model No: YZPST-C458PB
Marka: YZPST
Typ pakietu | : | 1. Opakowanie antyelektrostatyczne 2. Karton 3. Plastikowe opakowanie ochronne |
TARNIKA WYSOKIEJ MOCY DO APLIKACJI FALOWNIKÓW I ZBIORNIKÓW
YZPST- C458PB
Funkcje:
. Wszystkie rozproszone struktury
. Interdigitated Amplifying Gate Configuration
. Gwarantowany maksymalny czas wyłączenia
. Wysoka zdolność dV / dt
. Urządzenie zmontowane ciśnieniowo
CHARAKTERYSTYKA ELEKTRYCZNA I OCENY
Blokowanie - wyłączone
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
C458PB |
1200 |
1200 |
1300 |
V RRM = Powtarzalne szczytowe napięcie wsteczne
V DRM = Repetitive peak off state voltage
V RSM = Niepowtarzalne szczytowe napięcie wsteczne (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
10 mA 35 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
600V/msec |
Prowadzenie - na stanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
1200 |
|
A |
Tc=85oC |
RMS value of on-state current |
ITRMS |
|
1570 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
18400
16900 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.66x106 |
|
A2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.60 |
|
V |
ITM =3000 A; Duty cPSTCle £ 0.01% |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
600 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
10 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 150 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 3
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dynamiczny
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
1.5 |
0.7 |
ms |
ITM = 500 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
19
|
|
ms |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
* |
2000 |
mC |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
* Gwarantowane maks. wartość, skontaktuj się z fabryką.
CHARAKTERYSTYKA TERMICZNA I MECHANICZNA I OZNACZENIA
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.023 0.046 |
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (j-c) |
|
0.010 0.020 |
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
19.5 |
21 |
|
kN |
|
* Powierzchnie montażowe są gładkie, płaskie i nasmarowane
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