Tyrystor z przetwornicą częstotliwości r1275
Pobierz najnowszą cenęRodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Rodzaj płatności: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transport: | Ocean,Air |
Porta: | Shanghai |
Model No: YZPST-R1275NS21L
Marka: YZPST
Przetwornica tyrystorowa o dużej mocy
YZPST-R1275NS21L
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
1275 |
|
A |
Tc=55oC |
RMS value of on-state current |
ITRMS |
|
1870 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
21400
18900 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
2.66x106 |
|
A2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.90 |
|
V |
ITM = 2000 A; Duty cPSTCle £ 0.01% |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Bramkowanie
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
10 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 150 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 3
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dynamiczny
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
1.5 |
0.7 |
ms |
ITM = 500 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
40
|
|
ms |
ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
* |
2000 |
mC |
ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V |
* Gwarantowane maks. wartość, skontaktuj się z fabryką.
CHARAKTERYSTYKA TERMICZNA I MECHANICZNA I OZNACZENIA
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.023 0.046 |
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (j-c) |
|
0.010 0.020 |
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
19.5 |
21 |
|
kN |
|
* Powierzchnie montażowe są gładkie, płaskie i nasmarowane
Uwaga: w przypadku obrysu i wymiarów obudowy, patrz rysunek szkicu obudowy na stronie 3 niniejszej dokumentacji technicznej
Zarys rysunku
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.