$601-99 Piece/Pieces
$48≥100Piece/Pieces
| Rodzaj płatności: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Zamówienie: | 1 Piece/Pieces |
| transport: | Ocean,Air |
| Porta: | SHANGHAI |
Model No: YZPST-A1237NC280
Marka: YZPST
Asymetryczny tyrystor
YZPST-A1237NC280
Firma Asymmetric Thyristor 25V przeszła certyfikację systemu jakości ISO9001, a jakość jest gwarantowana. Odpowiedni do twoich potrzeb SCR.
Blokowanie - stan wyłączony
|
VDRM (1) |
VDSM (1) |
VRRM (1) |
VRSM(1) |
|
2800 |
2800 |
30 |
30 |
V DRM = powtarzalne napięcie szczytowe wyłączone
V RSM = Nie powtarzalne szczytowe napięcie wsteczne
Uwagi:
Wszystkie oceny są określone dla Tj = 25 o C, chyba że
podano inaczej.
(1) Wszystkie wartości napięcia są określone dla zastosowanego
Sinusoidalny kształt fali 50 Hz / 60 Hz w
zakres temperatur od -40 do +125 o C.
(2) 10 ms. max. szerokość impulsu
(3) Maksymalna wartość dla Tj = 125 o C.
(4) Minimalna wartość liniowa i wykładnicza
kształt fali do 80% znamionowego V DRM . Otwarcie bramy.
Tj = 125 o C.
(5) Wartość niepowtarzalna.
(6) Wartość di / dt ustala się zgodnie
ze standardem EIA / NIMA RS-397, sekcja
5–2–2–6. Zdefiniowana wartość będzie dodatkowa
odniesienie do tego uzyskanego z obwodu tłumiącego,
zawierający kondensator 0,2 mF i 20 omów
rezystancja równolegle z thristor pod
test.
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
10 mA 60 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
3000 V/msec |
Prowadzenie - stan włączony
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV)M |
|
1237 |
|
A |
Sinewave,180o conduction,Tc=55oC |
|
RMS value of on-state current |
ITRMSM |
|
2555 |
|
A |
Nominal value |
|
Peak one cycle surge (non repetitive) current |
ITSM |
|
-
18 |
|
KA
KA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
1.62x103 |
|
KA2s |
8.3 msec and 10.0 msec |
|
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.1 |
|
V |
ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC |
|
Threshold vlotage |
VT0 |
|
1.7 |
|
V |
|
|
Slope resistance |
rT |
|
0.21 |
|
mΩ |
|
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
2000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Bramkowanie
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
|
Average gate power dissipation |
PG(AV) |
|
10 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
- 400 - |
|
mA mA mA |
VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = +25 oC VD = 10 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
|
- 3.0 -
|
|
V V V |
VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VRGM |
|
10 |
|
V |
|
Dynamiczny
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
- |
1 |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -50 V) |
tq |
|
- |
20 |
ms |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cycle ³ 0.01% |
|
Reverse recovery charge |
Qrr |
|
- |
- |
mC |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
CHARAKTERYSTYKA TERMICZNA I MECHANICZNA I OCENY
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/KW |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to heatsink |
RQ (c-s) |
|
- - |
|
K/KW |
Double sided cooled * Single sided cooled * |
|
Thermal resistamce - junction to heatsink |
RQ (j-s) |
|
24 48 |
|
K/KW |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
19 |
26 |
|
kN |
|
|
Weight |
W |
|
|
510 |
g |
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